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| ESM1602B QUAD COMPARATOR INTERFACE CIRCUIT .MI .OUTPUTCURRENT:15mA .LARGESUPPLYVOLTAGERANGE:+10Vt .I .I DESCRIPTION NIMUM HYSTERESIS VOLTAGE AT EACH INPUT : 0.3V o + 35V NTERNAL THERMAL PROTECTION NPUT AND OUTPUT CLAMPING PROTECTION DIODES. DIP14 The ESM1602Bis a quadruplecomparatorintented to provide an interface between signal processing and transmitting lines in very noisy industrial surroundings. Outputof each comparator,used as line driver, supplies a constant current (PNP output stage) and is specially well protected against powerful overvoltages. The open collector output circuit allows the connectionof several comparators to a single transmitting line. The ESM1602B can operate as receiver on a line transmitting noisy high-voltage signals. Hysteresis effect, internally implemented on inputs of each comparator provides an excellent noise immunity. In addition, each input is also protected against overvoltages. PIN CONNECTIONS (top view) DIP14 SO16 ORDER ING NUMBERS: ESM1602B (DIP14) ESM1602BFP (SO16) The ESM1602B can operate in a wide supply voltage range (standard operational amplifier 15 V supply or single + 12 V or + 24 V supplies used in industrial electronic sets). Moreover, internal thermal protection circuitry cuts out the output current of the four comparatorswhen power dissipation becomes excessive. SO16 1 - Inverting input 1 2 - Non-inverting input 3 - Output 1 4 - Non-inverting input 5 - Inverting input 2 6 - Output 2 7 - GND 8 - Output 3 9 - Inverting input 3 10 - Non-inverting input 11 - Output 4 12 - Non-inverting input 13 - Inverting input 4 14 - VCC 1 2 3 4 1 - Inverting input 1 2 -Non-inverting input 1 3 - Output 1 4 - Non-inverting input 2 5 - Inverting input 2 6 - Output 2 7 - GND 8 - N.C. 9 - N.C. 10 - Output 3 11 - Inverting input 3 12 - Non-inverting input 3 13 - Output 4 14 - Non-inverting input 4 15 - Inverting input 4 16 - VCC January 1996 1/11 ESM1602B SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCC VID VI IO (max) Ptot Top Tstg Supply Voltage Differential Input Voltage Input Voltage Output Current Power Dissipation Operating Ambient Temperature Range Storage Temperature Range Parameter Value 45 45 -0.7 to +45 Internally Limited Internally Limited -25 to +85 -40 to +150 Unit V V V mA W o o C C 2/11 ESM1602B ELECTRICAL CHARACTERISTICS VCC = +35V, -25oC Tamb +85oC (unless otherwise specified) Symbol + VI VI - Parameter Input Voltage Range - Note 1 Non-inverting Input Inverting Input Input Control Voltage (2V < VCM < 33V) - Note 2 Input Bias Current - Note 3 Short-circuit Output Current VCC = +10 to +35 V Output Saturation Voltage (high level) - (IO = -10mA) Output Saturation Voltage (high level) - (IO = -10mA) Supply Current R L = for the 4 Comparators R L Common for the 4 Comparators Output Slew-rate (R L = 3k, Tamb = +25oC) Input Protective Diode Forward Voltage (I = 20mA, Tamb = +25oC) Energy of Pulses against which Circuit Output is Protected o (Tamb = +25 C) - Note 4 Pulsed Current Applied to Protective Output Diodes (Tamb = +25oC) - Note 5 Min. 0 2 150 Typ. Max. 33 33 500 Typ. V V mV A Fig. VC IIB ISC VCC-VO VO ICC 8 9 1 6 1 1 4 10 1 5 25 1.5 1.6 6 13 mA V V mA mA V/s 11 12 13,14 SVO VF - - 1.5 20 0.4 V mJ A 15 No tes : 1. When negative input is biased between 0 and 2 volts output is always low. 2. Comparator hysteresis voltage on positive input on the one hand and negative input on the other hand equals sum of input control voltages VC1 + VC2 or VC3 + VC4. 3. Input current flows out of the circuit owing to PNP input stage. This current is constant and independent of output level. So no load change is transmitted to inputs. 4. By definition, a circuit is immunized against powerful signals when no durable character istic change occurs after the application of these signals and when the circuit has not been destroyed. In industrial surroundings, parasitic signals contain usually high voltage (over 200 V) AC harmonics having variable impedance of 500 to 10k. The powerdissipation of thesesignals is divided between clamping diodes and the VCC. Simulationis used to determine the maximum energy level. The injected current value cannot in any case exceed 3A. 5. Output protective diodes are tested individually by means of positive and negative dischar ge voltages of a capacitor. The negative discharge control occurs through a single diode. During positive discharge, due to the properties of integration, a grounded collector PNP transistor appears in parallel with the clamping diode connected to VCC. A part of the current flows through this transistor, V CE being greater than VCC. If T is the total discharge duration, energy dissipated in the circuit is : T W = [ i1 vd + i2 (VCC + vd) ] O dt For a certain injected current, the lower the current I2, that is to say the lower the PNP current gain the smaller the energy is dissipated in the circuit. Topology and technological processes have been chosen to shorten this current gain. 3/11 ESM1602B Figure 1: Input Bias Current Figure 2: Output Saturation Voltage Figure 3: Output Saturation Voltage Figure 4: Short Circuit Current 4/11 ESM1602B TYPICAL APPLICATIONS Figure 5 : Conversion of DTL, TTL, MOS Signals on a Transmitting Line. Figure 6 : Reception of Highly Noisy Signals. 5/11 ESM1602B Figure 7. TEST CIRCUITS Figure 8. 6/11 ESM1602B Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. 7/11 ESM1602B Figure 15. Figure 16: Response Time. 8/11 ESM1602B DIP14 PACKAGE MECHANICAL DATA Dimensions Min. a1 B b b1 D E e e3 F i L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 Millimeters Typ. Max. Min. 0.020 0.055 0.020 0.010 0.787 DIP14.TBL Inches Typ. Max. 0.065 9/11 ESM1602B S016 PACKAGE MECHANICAL DATA Dimensions Min. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 9.8 5.8 1.27 8.89 4.0 5.3 1.27 0.62 8 (max.) o Millimeters Typ. Max. 1.75 0.1 0.2 1.6 0.35 0.19 0.5 45o (typ.) 10 6.2 0.386 0.228 0.46 0.25 0.014 0.007 0.004 Min. Inches Typ. Max. 0.069 0.008 0.063 0.018 0.010 0.020 0.394 SO16.TBL 0.244 0.050 0.350 0.150 0.181 0.020 0.157 0.209 0.050 0.024 10/11 ESM1602B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rig hts of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supe rsedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 11/11 |
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